N-Channel 650V (D-S) Power MOSFET

FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

文件：1.10767 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description\nThe 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching\ncharacteristics, and designed for high voltage applications such as switching power supply, AC adapter. ? Low gate charge\n? QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)\n??Gate voltage rating ±30 V\n? Low on-state resistance\n? RDS(on) = 1.2 ? MAX. (VGS = 10 V, ID = 3.0 A)\n? Avalanche capability ratings;

Renesas

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low gate charge QG = 21 nC

文件：351.31 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Ultra-Low PDL Fused Tap Coupler

文件：166.99 Kbytes 頁數(shù)：3 Pages

OPLINK

Ultra-Low PDL Fused Tap Coupler

文件：166.99 Kbytes 頁數(shù)：3 Pages

OPLINK

Technical reference AC Servo Motor & Driver

文件：1.86207 Mbytes 頁數(shù)：27 Pages

PANASONIC

松下