絲?。?strong>K12A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

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順燁電子

絲?。?a target="_blank" title="Marking" href="/k12a50w/marking.html">K12A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)

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絲?。?a target="_blank" title="Marking" href="/k12a60d/marking.html">K12A60D；Package：SC-67；Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.45 ? (typ.) ? High forward transfer admittance: ?Yfs? = 7.5 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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絲?。?a target="_blank" title="Marking" href="/k12a80w/marking.html">K12A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)

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Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS = 10 μA (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON)= 0.45 Ω(typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS= 10 μA (VDS= 500 V) ? Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.45 ? (typ.) ? High forward transfer admittance: ?Yfs? = 7.5 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：192.33 Kbytes 頁數(shù)：6 Pages

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Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON-resistance : RDS (ON) = 0.36 ? (typ.) ? High forward transfer admittance : ?Yfs? = 7.0 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 ? (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) Applications ? Switching Voltage Regulators

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2 x 1.2mm Auto Grade Tuning Fork

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