Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON)= 0.45 Ω(typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS= 10 μA (VDS= 500 V) ? Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS = 10 μA (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS = 10 μA (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：319.18 Kbytes 頁數(shù)：6 Pages

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