Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.45 ? (typ.) ? High forward transfer admittance: ?Yfs? = 7.5 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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東芝

isc N-Channel MOSFET Transistor

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ISC

無錫固電

絲?。?strong>K12A60D；Package：SC-67；Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.45 ? (typ.) ? High forward transfer admittance: ?Yfs? = 7.5 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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東芝

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON-resistance : RDS (ON) = 0.36 ? (typ.) ? High forward transfer admittance : ?Yfs? = 7.0 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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東芝

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 ? (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) Applications ? Switching Voltage Regulators

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東芝

Bi-Directional Triode Thyristor

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SEMIWELL

矽門微