絲?。?strong>K15A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

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絲印：K15A60U；Package：SC-67；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.24 ? (typ.) ? High forward transfer admittance: ?Yfs? = 8.5 S (typ.) ? Low leakage current: IDSS = 100 μA (VDS = 600 V) ? Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) ? High forward transfer admittance: |Yfs| = 7.0 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.24 ? (typ.) ? High forward transfer admittance: ?Yfs? = 8.5 S (typ.) ? Low leakage current: IDSS = 100 μA (VDS = 600 V) ? Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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Switching Voltage Regulators

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