絲?。?strong>K115；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導體

絲印：K115；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：519.25 Kbytes 頁數(shù)：3 Pages

SY

順燁電子

絲?。?strong>K115；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.43 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風微

絲?。?a target="_blank" title="Marking" href="/k115a65z5/marking.html">K115A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.0

文件：497.86 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k115e65z5/marking.html">K115E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.02 mA

文件：507.61 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲印：K115N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.0

文件：504.97 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k115u65z5/marking.html">K115U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.0

文件：527.27 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k115j/marking.html">K115J；Package：SOF2-4J；Surface Mount Schottky Bridge Rectifiers

文件：957.82 Kbytes 頁數(shù)：3 Pages

JUXING

廣東鉅興電子

115 Front Combination Padlock 50mm

Features & Benefits Code is resettable for extra security. ~ Can be coded alike in a suite. ~ Key for resetting code. ~ Damage resistant cover. ~ Weatherproof. ~ 4-digit code. ~ 10,000 possible combinations. ~ Suitable for securing gates, sheds, garages and any other medium security applicatio

文件：245.35 Kbytes 頁數(shù)：1 Pages

CARL

14 pin DIP, 5.0 Volt, Clock Oscillator

文件：353.17 Kbytes 頁數(shù)：2 Pages

MTRONPTI