絲?。?strong>K10E；Package：SOT23-5；High bandwidth (30 MHz) low offset (200 μV) rail-to-rail 5 V op amp

Features ? Gain bandwidth product 30 MHz, unity gain stable ? Slew rate 20 V/μs ? Low input bias current: 2 pA typ. ? Low input voltage noise density 7 nV/√Hz @ 10 kHz ? Wide supply voltage range: 2.0 V to 5.5 V ? Rail-to-rail input and output ? Extended temperature range: -40 °C to +125 °C

文件：8.77229 Mbytes 頁數(shù)：34 Pages

STMICROELECTRONICS

意法半導體

絲印：K10E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA)

文件：425.38 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k10eet6/marking.html">K10EET6；Package：PG-TO220-3FP；IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode

文件：2.05423 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌