4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully sync

文件：895.21 Kbytes 頁數(shù)：60 Pages

ISSI

矽成半導體

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully sync

文件：895.21 Kbytes 頁數(shù)：60 Pages

ISSI

矽成半導體

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully sync

文件：895.21 Kbytes 頁數(shù)：60 Pages

ISSI

矽成半導體

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully sync

文件：895.21 Kbytes 頁數(shù)：60 Pages

ISSI

矽成半導體

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully sync

文件：895.21 Kbytes 頁數(shù)：60 Pages

ISSI

矽成半導體

4M x 16Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the ris

文件：937.43 Kbytes 頁數(shù)：27 Pages

ISSI

矽成半導體

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 頁數(shù)：27 Pages

ISSI

矽成半導體

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 頁數(shù)：27 Pages

ISSI

矽成半導體

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 頁數(shù)：27 Pages

ISSI

矽成半導體

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 頁數(shù)：27 Pages

ISSI

矽成半導體