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    首頁 >IS45>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IS45S16320D-7BLA1

    16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

    FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

    文件:1.57007 Mbytes 頁數(shù):66 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S16320D-7BLA2

    16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

    FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

    文件:1.57007 Mbytes 頁數(shù):66 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S16320D-7CTLA1

    16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

    FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

    文件:1.57007 Mbytes 頁數(shù):66 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S16320D-7CTLA2

    16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

    FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

    文件:1.57007 Mbytes 頁數(shù):66 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S16320D-7TLA1

    16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

    FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

    文件:1.57007 Mbytes 頁數(shù):66 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S16320D-7TLA2

    16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

    FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

    文件:1.57007 Mbytes 頁數(shù):66 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S32200E

    512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

    OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

    文件:981.35 Kbytes 頁數(shù):59 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S32200E-6BLA1

    512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

    OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

    文件:981.35 Kbytes 頁數(shù):59 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S32200E-6TLA1

    512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

    OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

    文件:981.35 Kbytes 頁數(shù):59 Pages

    ISSI

    矽成半導(dǎo)體

    IS45S32200E-75EBLA1

    512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

    OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

    文件:981.35 Kbytes 頁數(shù):59 Pages

    ISSI

    矽成半導(dǎo)體

    詳細(xì)參數(shù)

    • 型號:

      IS45

    • 制造商:

      SHARP

    • 制造商全稱:

      Sharp Electrionic Components

    • 功能描述:

      High Speed Response Type OPIC Light Detector

    供應(yīng)商型號品牌批號封裝庫存備注價格
    ISSI
    25+
    BGA
    1450
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    ISSI
    23+
    BGA
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價
    ISSI
    23+
    BGA
    3000
    一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
    詢價
    ISSI
    1031+
    BGA
    1450
    一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
    詢價
    ISSI
    23+
    BGA
    12800
    ##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
    詢價
    ISSI
    24+
    BGA
    5000
    全新原裝正品,現(xiàn)貨銷售
    詢價
    ISSI
    24+
    BGA
    5000
    只有原裝
    詢價
    ISSI
    原廠封裝
    9800
    原裝進(jìn)口公司現(xiàn)貨假一賠百
    詢價
    ISSI
    22+
    BGA
    20000
    公司只做原裝 品質(zhì)保障
    詢價
    ISSI
    26+
    BGA
    12000
    原裝,正品
    詢價
    更多IS45供應(yīng)商 更新時間2026-1-22 13:57:00

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