64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully synchronous;

文件：913.2 Kbytes 頁數(shù)：61 Pages

ISSI

矽成半導(dǎo)體

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully synchronous;

文件：913.2 Kbytes 頁數(shù)：61 Pages

ISSI

矽成半導(dǎo)體

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES ? Clock frequency: 166, 143, 133 MHz ? Fully synchronous;

文件：913.2 Kbytes 頁數(shù)：61 Pages

ISSI

矽成半導(dǎo)體

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

文件：1.57007 Mbytes 頁數(shù)：66 Pages

ISSI

矽成半導(dǎo)體

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

文件：1.57007 Mbytes 頁數(shù)：66 Pages

ISSI

矽成半導(dǎo)體

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

文件：1.57007 Mbytes 頁數(shù)：66 Pages

ISSI

矽成半導(dǎo)體

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

文件：1.57007 Mbytes 頁數(shù)：66 Pages

ISSI

矽成半導(dǎo)體

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

文件：1.57007 Mbytes 頁數(shù)：66 Pages

ISSI

矽成半導(dǎo)體

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

文件：1.57007 Mbytes 頁數(shù)：66 Pages

ISSI

矽成半導(dǎo)體

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES ? Clock frequency: 200, 166, 143 MHz ? Fully synchronous; all signals referenced to a positive clock edge ? Internal bank for hiding row access/precharge ? Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 ? LVTTL interface ? Prog

文件：1.57007 Mbytes 頁數(shù)：66 Pages

ISSI

矽成半導(dǎo)體