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首頁 >IS41L>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IS41LV16100A-50TLI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60K	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60KI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60KL	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60KLI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60T	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60TI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60TL	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100A-60TLI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI
IS41LV16100B	文件：143.69 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：143.69 Kbytes 頁數(shù)：22 Pages	ISSI 矽成半導體	ISSI

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詳細參數(shù)

型號：
IS41L
制造商：
ICSI
制造商全稱：
Integrated Circuit Solution Inc
功能描述：
256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市坤融電子科技有限公司	IS41LV16256-60T	ISSI	2025+	TSOP-44	5000	原裝進口價格優(yōu) 請找坤融電子!	詢價
深圳市福田區(qū)綠盛電子商行	IS41LV16256-60T	ISSI	2015+	DIP/SOP	19889	一級代理原裝現(xiàn)貨,特價熱賣!	詢價
深圳市一線半導體有限公司	IS41LV16256-60T		24+	TSSOP	7003		詢價
深圳市豪邁興電子有限公司	IS41LV16256-60T	ISSI	24+	SOJ	5825	公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!	詢價
深圳市英卓爾科技有限公司	IS41LV16256-60T	ISSI	20+	SSOP-40	2960	誠信交易大量庫存現(xiàn)貨	詢價
上海市鑫鴻達電子	IS41LV16256-60T	ISSI	2022+		158	全新原裝貨期兩周	詢價
瀚佳科技(深圳)有限公司	IS41LV16256-60T	ISSI	24+	SOJ	65200	一級代理/放心采購	詢價
艾睿（深圳）半導體有限公司	IS41LV16256-60T	ISSI	2447	SOJ	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
京海半導體(深圳)有限公司	IS41LV16256-60T	ISSI	25+	SSOP-40	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市恒達億科技有限公司	IS41LV16256-60T	ISSI	25+	TSOP	4500	全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售	詢價

更多IS41L供應商更新時間2026-1-23 9:03:00

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