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    首頁 >IS41L>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IS41LV16100-50K

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50KI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50T

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50TI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50TL

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50TLI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-60K

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-60KI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-60T

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-60TI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    詳細參數(shù)

    • 型號:

      IS41L

    • 制造商:

      ICSI

    • 制造商全稱:

      Integrated Circuit Solution Inc

    • 功能描述:

      256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    供應(yīng)商型號品牌批號封裝庫存備注價格
    ISSI
    2025+
    TSOP-44
    5000
    原裝進口價格優(yōu) 請找坤融電子!
    詢價
    ISSI
    2015+
    DIP/SOP
    19889
    一級代理原裝現(xiàn)貨,特價熱賣!
    詢價
    24+
    TSSOP
    7003
    詢價
    ISSI
    24+
    SOJ
    5825
    公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
    詢價
    ISSI
    20+
    SSOP-40
    2960
    誠信交易大量庫存現(xiàn)貨
    詢價
    ISSI
    2022+
    158
    全新原裝 貨期兩周
    詢價
    ISSI
    24+
    SOJ
    65200
    一級代理/放心采購
    詢價
    ISSI
    2447
    SOJ
    100500
    一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
    詢價
    ISSI
    25+
    SSOP-40
    10000
    原裝現(xiàn)貨假一罰十
    詢價
    ISSI
    25+
    TSOP
    4500
    全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
    詢價
    更多IS41L供應(yīng)商 更新時間2026-1-22 15:08:00

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