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    首頁(yè) >IS41LV16100B>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    IS41LV16100B

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50K

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50KI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50KL

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50KLI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50T

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50TI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50TL

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-50TLI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100B-60K

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

    文件:143.69 Kbytes 頁(yè)數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    詳細(xì)參數(shù)

    • 型號(hào):

      IS41LV16100B

    • 制造商:

      ISSI

    • 制造商全稱:

      Integrated Silicon Solution, Inc

    • 功能描述:

      1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    ISSI
    06+
    TSOP44
    2590
    全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
    詢價(jià)
    ISSI
    24+
    TSSOP
    37
    詢價(jià)
    ISSI
    23+
    44-TSOPII
    1389
    專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
    詢價(jià)
    ISSI
    25+
    SOJ-42
    35
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
    詢價(jià)
    ISSI
    24+
    TSOP
    5825
    公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
    詢價(jià)
    ISSI
    23+
    TSOP
    5000
    原裝正品,假一罰十
    詢價(jià)
    ISSI
    1701+
    ?
    8450
    只做原裝進(jìn)口,假一罰十
    詢價(jià)
    ISSI
    17+
    TSOP44
    9988
    只做原裝進(jìn)口,自己庫(kù)存
    詢價(jià)
    ISSI
    23+
    NA
    1
    專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià),原裝元器件供應(yīng),支持開(kāi)發(fā)樣品
    詢價(jià)
    ISSI
    25+
    TSOP
    2987
    絕對(duì)全新原裝現(xiàn)貨供應(yīng)!
    詢價(jià)
    更多IS41LV16100B供應(yīng)商 更新時(shí)間2026-1-23 8:01:00

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