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          首頁 >IS41C8200>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IS41C8200

          2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per

          文件:159.03 Kbytes 頁數(shù):18 Pages

          ISSI

          矽成半導(dǎo)體

          IS41C8200

          2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          ISSI

          矽成半導(dǎo)體

          IS41C8200-50J

          2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per

          文件:159.03 Kbytes 頁數(shù):18 Pages

          ISSI

          矽成半導(dǎo)體

          IS41C8200-50JI

          2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per

          文件:159.03 Kbytes 頁數(shù):18 Pages

          ISSI

          矽成半導(dǎo)體

          IS41C8200-60J

          2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per

          文件:159.03 Kbytes 頁數(shù):18 Pages

          ISSI

          矽成半導(dǎo)體

          IS41C8200-60JI

          2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per

          文件:159.03 Kbytes 頁數(shù):18 Pages

          ISSI

          矽成半導(dǎo)體

          詳細參數(shù)

          • 型號:

            IS41C8200

          • 制造商:

            ISSI

          • 制造商全稱:

            Integrated Silicon Solution, Inc

          • 功能描述:

            2M x 8(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ISSI
          23+
          10000
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          24+
          SOP
          34
          詢價
          23+
          原廠封裝
          9888
          專做原裝正品,假一罰百!
          詢價
          ISSI
          2447
          TSOP44
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          ISSI
          2023+環(huán)保現(xiàn)貨
          TSOP44
          11670
          專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
          詢價
          CSI
          23+
          SOP
          5000
          原裝正品,假一罰十
          詢價
          CSI
          23+
          SOP
          55242
          ##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
          詢價
          ISSI
          20+
          HSOP
          2960
          誠信交易大量庫存現(xiàn)貨
          詢價
          ISSI
          23+
          SOP
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ISSI
          25+23+
          SOJ42
          18525
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          更多IS41C8200供應(yīng)商 更新時間2026-1-21 15:09:00
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