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    首頁(yè) >IS41>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    IS41C8205-60JI

    2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION TheISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bithighperformance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. FEATURES ? Fast Page Mode Access Cycle ? TTL compati

    文件:143.78 Kbytes 頁(yè)數(shù):17 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50K

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50KI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50T

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50TI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50TL

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-50TLI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-60K

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-60KI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16100-60T

    1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

    文件:123.63 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    詳細(xì)參數(shù)

    • 型號(hào):

      IS41

    • 制造商:

      ICSI

    • 制造商全稱:

      Integrated Circuit Solution Inc

    • 功能描述:

      256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    ISSI
    2015+
    DIP/SMD
    19889
    一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
    詢價(jià)
    ISSI
    2023+
    TSOP
    50000
    原裝現(xiàn)貨
    詢價(jià)
    ISSI
    23+
    TSOP
    4710
    一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
    詢價(jià)
    ISSI
    25+
    SOJ40
    3850
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
    詢價(jià)
    ISSI Integrated Silicon Soluti
    22+
    40TSOP
    9000
    原廠渠道,現(xiàn)貨配單
    詢價(jià)
    ISSI
    三年內(nèi)
    1983
    只做原裝正品
    詢價(jià)
    ISSI/矽成
    1240
    DRAM/256KX16EDO/TSOP2(40
    1692
    原裝香港現(xiàn)貨真實(shí)庫(kù)存。低價(jià)
    詢價(jià)
    ISSI, Integrated Silicon Solut
    24+
    40-TSOP
    56200
    一級(jí)代理/放心采購(gòu)
    詢價(jià)
    ISSI
    1931+
    N/A
    493
    加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
    詢價(jià)
    ISSI
    25+
    40-TSOP
    1001
    就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
    詢價(jià)
    更多IS41供應(yīng)商 更新時(shí)間2026-1-21 16:40:00

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