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    首頁 >IS41>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IS41C16256-60T

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n

    文件:215.66 Kbytes 頁數(shù):20 Pages

    ICSI

    IS41C16256-60TI

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

    文件:153.38 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導(dǎo)體

    IS41C16256C

    4Mb DRAM WITH EDO PAGE MODE

    DESCRIPTION The ISSIs IS41C/LV16256C is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte W

    文件:475.46 Kbytes 頁數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41C16257C

    4Mb DRAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41C16257C/IS41LV16257C is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes th

    文件:361.47 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41C1664-30T

    64K x 16 bit Dynamic RAM with EDO Page Mode

    DESCRIPTION TheICSI IC41C1664 and IC41LV1664 is a 65,536 x 16-bit high performance CMOS Dynamic Random Access Memories. The IC41C1664 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 10 ns per

    文件:276.49 Kbytes 頁數(shù):21 Pages

    ICSI

    IS41C44002

    4Mx4 bit Dynamic RAM with EDO Page Mode

    DESCRIPTION The ICSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

    文件:236.69 Kbytes 頁數(shù):20 Pages

    ICSI

    IS41C44002

    4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

    文件:158.88 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導(dǎo)體

    IS41C44002-50J

    4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

    文件:158.88 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導(dǎo)體

    IS41C44002-50JI

    4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

    文件:158.88 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導(dǎo)體

    IS41C44002-60J

    4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

    文件:158.88 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導(dǎo)體

    詳細參數(shù)

    • 型號:

      IS41

    • 制造商:

      ICSI

    • 制造商全稱:

      Integrated Circuit Solution Inc

    • 功能描述:

      256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    供應(yīng)商型號品牌批號封裝庫存備注價格
    ISSI
    2015+
    DIP/SMD
    19889
    一級代理原裝現(xiàn)貨,特價熱賣!
    詢價
    ISSI
    2023+
    TSOP
    50000
    原裝現(xiàn)貨
    詢價
    ISSI
    23+
    TSOP
    4710
    一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
    詢價
    ISSI
    25+
    SOJ40
    3850
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    ISSI Integrated Silicon Soluti
    22+
    40TSOP
    9000
    原廠渠道,現(xiàn)貨配單
    詢價
    ISSI
    三年內(nèi)
    1983
    只做原裝正品
    詢價
    ISSI/矽成
    1240
    DRAM/256KX16EDO/TSOP2(40
    1692
    原裝香港現(xiàn)貨真實庫存。低價
    詢價
    ISSI, Integrated Silicon Solut
    24+
    40-TSOP
    56200
    一級代理/放心采購
    詢價
    ISSI
    1931+
    N/A
    493
    加我qq或微信,了解更多詳細信息,體驗一站式購物
    詢價
    ISSI
    25+
    40-TSOP
    1001
    就找我吧!--邀您體驗愉快問購元件!
    詢價
    更多IS41供應(yīng)商 更新時間2026-1-22 16:50:00

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