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    首頁(yè) >IRG4BC30F>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    IRG4BC30F

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

    Features ? Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard TO-220AB package Benefits ? Generation 4 IGBTs off

    文件:167.27 Kbytes 頁(yè)數(shù):8 Pages

    IRF

    IRG4BC30F

    Fit Rate / Equivalent Device Hours

    文件:98.39 Kbytes 頁(yè)數(shù):35 Pages

    IRF

    IRG4BC30F

    INSULATED GATE BIPOLAR TRANSISTOR

    文件:177.75 Kbytes 頁(yè)數(shù):9 Pages

    IRF

    IRG4BC30FD

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

    Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-s

    文件:412.64 Kbytes 頁(yè)數(shù):10 Pages

    IRF

    IRG4BC30FD

    IGBT

    DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

    文件:387.93 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無錫固電

    IRG4BC30FD1

    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

    Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

    文件:361.71 Kbytes 頁(yè)數(shù):10 Pages

    IRF

    IRG4BC30FD1PBF

    Fast CoPack IGBT

    Features ? Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with Hyperfast FRED diodes for ultra lo

    文件:421.57 Kbytes 頁(yè)數(shù):11 Pages

    IRF

    IRG4BC30FDPBF

    Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

    Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ? Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

    文件:3.17753 Mbytes 頁(yè)數(shù):11 Pages

    IRF

    IRG4BC30FD-S

    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

    Features ? Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. ? IGBT co-packaged with Hyperfast FRED diodes for ultra l

    文件:1.25649 Mbytes 頁(yè)數(shù):11 Pages

    IRF

    IRG4BC30FD-SPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

    Features ? Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter . parameter distribution and higher efficiency than Generation 3. ? IGBT co-packaged with Hyperfast FRED diodes for ultra

    文件:1.17757 Mbytes 頁(yè)數(shù):12 Pages

    IRF

    產(chǎn)品屬性

    • 產(chǎn)品編號(hào):

      IRG4BC30F

    • 制造商:

      Infineon Technologies

    • 類別:

      分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

    • 包裝:

      卷帶(TR)

    • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

      1.8V @ 15V,17A

    • 開關(guān)能量:

      230μJ(開),1.18mJ(關(guān))

    • 輸入類型:

      標(biāo)準(zhǔn)

    • 25°C 時(shí) Td(開/關(guān))值:

      21ns/200ns

    • 測(cè)試條件:

      480V,17A,23 歐姆,15V

    • 工作溫度:

      -55°C ~ 150°C(TJ)

    • 安裝類型:

      通孔

    • 封裝/外殼:

      TO-220-3

    • 供應(yīng)商器件封裝:

      TO-220AB

    • 描述:

      IGBT 600V 31A 100W TO220AB

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    IR
    04+
    TO-220AB
    1000
    全新原裝 絕對(duì)有貨
    詢價(jià)
    IR
    24+
    原廠封裝
    2000
    原裝現(xiàn)貨假一罰十
    詢價(jià)
    INFINEON
    25+
    TO-220
    3000
    就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
    詢價(jià)
    Infineon
    22+
    NA
    2118
    加我QQ或微信咨詢更多詳細(xì)信息,
    詢價(jià)
    IR
    23+
    TO
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價(jià)
    IR
    25+
    TO-220
    10000
    原裝現(xiàn)貨假一罰十
    詢價(jià)
    Infineon Technologies
    22+
    TO220AB
    9000
    原廠渠道,現(xiàn)貨配單
    詢價(jià)
    IR
    26+
    原廠原封裝
    86720
    全新原裝正品價(jià)格最實(shí)惠 假一賠百
    詢價(jià)
    IR
    22+
    TO-220
    12245
    現(xiàn)貨,原廠原裝假一罰十!
    詢價(jià)
    IR
    14+;9917+
    TO-220
    233
    一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
    詢價(jià)
    更多IRG4BC30F供應(yīng)商 更新時(shí)間2026-1-22 16:20:00

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