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                >IRG4BC30FD>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    IRG4BC30FD
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
    
Features
? Fast: Optimized for medium operating
   frequencies ( 1-5 kHz in hard switching, >20
   kHz in resonant mode).
? Generation 4 IGBT design provides tighter
   parameter distribution and higher efficiency than
   Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast,
   ultra-s
    文件：412.64 Kbytes 頁數(shù)：10 Pages
    IRF
    

    IRG4BC30FD
    IGBT
    
DESCRIPTION
· Low VCE(ON) and Switching Losses
· High Speed Switching
· Low Power Loss
APPLICATIONS
· Welding
· PFC
    文件：387.93 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    IRG4BC30FD
    Fit Rate / Equivalent Device Hours
    文件：98.39 Kbytes 頁數(shù)：35 Pages
    IRF
    

    IRG4BC30FD1
    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
    
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
    文件：361.71 Kbytes 頁數(shù)：10 Pages
    IRF
    

    IRG4BC30FD1PBF
    Fast CoPack IGBT
    
Features
? Fast: Optimized for medium operating frequencies 
   (1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter 
   parameter distribution and higher efficiency than 
   Generation 3
? IGBT co-packaged with Hyperfast FRED diodes for ultra lo
    文件：421.57 Kbytes 頁數(shù)：11 Pages
    IRF
    

    IRG4BC30FDPBF
    Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )
    
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
? Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than 
    文件：3.17753 Mbytes 頁數(shù)：11 Pages
    IRF
    

    IRG4BC30FD-S
    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
    
Features
? Fast: Optimized for medium operating frequencies 
   (1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter 
   parameter distribution and higher efficiency than 
   Generation 3.
? IGBT co-packaged with Hyperfast FRED diodes for ultra l
    文件：1.25649 Mbytes 頁數(shù)：11 Pages
    IRF
    

    IRG4BC30FD-SPBF
    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
    
Features
? Fast: Optimized for medium operating frequencies 
   (1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter .
   parameter distribution and higher efficiency than 
   Generation 3.
? IGBT co-packaged with Hyperfast FRED diodes for ultra 
    文件：1.17757 Mbytes 頁數(shù)：12 Pages
    IRF
    

    IRG4BC30FD1PBF
    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
    文件：415.83 Kbytes 頁數(shù)：10 Pages
    IRF
    

    IRG4BC30FD1PBF_15
    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
    文件：415.83 Kbytes 頁數(shù)：10 Pages
    IRF
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Technology?：
      IGBT Gen 4
    • Switching Frequency?min?max：
      1.0kHz?8.0kHz
    • Package?：
      TO-220
    • Voltage Class?max：
      600.0V
    • IC(@100°)?max：
      17.0A
    • IC(@25°)?max：
      31.0A
    • ICpuls?max：
      124.0A
    • Ptot?max：
      100.0W
    • VCE(sat)?：
      1.59V?
    • Eon?：
      0.63mJ?
    • Eoff(Hard Switching)?：
      1.39mJ?
    • td(on)?：
      42.0ns?
    • tr?：
      26.0ns?
    • td(off)?：
      230.0ns?
    • tf?：
      160.0ns?
    • QGate?：
      51.0nC?
    • IF?max：
      120.0A
    • VF?：
      1.4V?
    • Qrr?：
      80.0nC?
    • Irrm?：
      3.5A?
    • Ets??(max)：
      2.02mJ?(3.9mJ)
    • VCE?max：
      600.0V
    
            
    
        
    
            
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    更多IRG4BC30FD供應(yīng)商
            更新時(shí)間2026-1-22 13:59:00
        
    
        
    
          
    
            
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