25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators, switching c

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INTERSIL

25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators,\nswitching conve ? 25A, 100V\n?rDS(ON)= 0.150?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance;

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RADIATION HARDENED POWER MOSFET THRU-HOLE

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) International Rectifier’s RADHard HEXFET?technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been chara

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