| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFPC60LC | Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：640.07 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPC60LC | Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：343.43 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFPC60LC | Power MOSFET 文件：689.15 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPC60LC | iscN-Channel MOSFET Transistor 文件：444.2 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
HEXFET Power MOSFET Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total 文件：110.13 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：640.07 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：689.15 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：689.15 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET? Power MOSFET 文件：1.41472 Mbytes 頁數(shù)：9 Pages | IRF | IRF | ||
IRFPC60LC | Power MOSFET ? Ultra low gate charge\n? Reduced gate drive requirement\n? Enhanced 30 V VGS rating; | Vishay 威世 | Vishay |
技術(shù)參數(shù)
- 漏源電壓（Vdss）：
600V
- 柵源極閾值電壓（最大值）：
4V @ 250uA
- 漏源導通電阻（最大值）：
400 mΩ @ 9.6A，10V
- 類型：
N 溝道
- 功率耗散（最大值）：
280W
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 3P |
161343 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
24+ |
原廠封裝 |
95 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
24+ |
TO247 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
VISHAY |
25+23+ |
TO-247 |
28881 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
20+ |
TO-247 |
368 |
樣品可出,原裝現(xiàn)貨 |
詢價 |
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