| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFPC50LC | Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes 文件：583.95 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPC50LC | Power MOSFET FEATURES ? Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Reduced Ciss, Coss, Crss ? Isolated central mounting hole ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/d 文件：643.8 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPC50LC | Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：333.89 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
Power MOSFET FEATURES ? Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Reduced Ciss, Coss, Crss ? Isolated central mounting hole ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/d 文件：643.8 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes 文件：583.95 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET 文件：1.59553 Mbytes 頁數(shù)：8 Pages | IRF | IRF | ||
IRFPC50LC | Power MOSFET ? Ultra low gate charge\n? Reduced gate drive requirement\n? Enhanced 30 V VGS rating; | Vishay 威世 | Vishay | |
IRFPC50LC | Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) | Infineon 英飛凌 | Infineon | |
MOSFET N-CH600V HEXFET MOSFET | Vishay 威世 | Vishay |
詳細參數(shù)
- 型號：
IRFPC50LC
- 功能描述：
MOSFET N-Chan 600V 11 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 3P |
161355 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-247AC |
8866 |
詢價 | |||
IR |
2015+ |
TO-247AC |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
VISHAY |
25+ |
TO247-3 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR |
25+ |
TO247 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Vishay Siliconix |
2022+ |
TO-247-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
23+ |
TO247 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO247 |
7000 |
詢價 | |||
IR/VISHAY |
25+ |
TO-247 |
12300 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 |
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