| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFL014 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件:949.69 Kbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFL014 | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Surface Mount ? Available in Tape & Reel ? Dynamic dV/dt Rating ? Fast Switching ? E 文件:176.76 Kbytes 頁數(shù):6 Pages | IRF | IRF | |
IRFL014 | Power MOSFET 文件:1.0036 Mbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFL014 | Power MOSFET 文件:1.0036 Mbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFL014 | Power MOSFET Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating; | Vishay 威世 | Vishay | |
IRFL014 | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A) | Infineon 英飛凌 | Infineon | |
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for 文件:144.1 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for 文件:158.96 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/fl014n/marking.html">FL014N;Package:SOT223;N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package. 文件:1.92767 Mbytes 頁數(shù):5 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
Advanced Process Technology Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for 文件:164.33 Kbytes 頁數(shù):8 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN:
IRFL014NTRPBF
- Qualification:
Non-Automotive
- Package name:
SOT223
- VDS max:
55 V
- RDS (on) @10V max:
160 m?
- ID @25°C max:
1.9 A
- QG typ @10V:
7 nC
- Special Features:
Small Power
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SYFOREVER |
25+ |
SOT-223 |
20300 |
SYFOREVER原裝特價IRFL014即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
24+ |
SOT-223 |
160789 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
VISHAY/威世 |
2450+ |
SOT-223 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
VISHAY/威世 |
2025+ |
SOT-223 |
5000 |
原裝進(jìn)口價格優(yōu) 請找坤融電子! |
詢價 | ||
IR |
24+ |
SOT-223 |
7196 |
新進(jìn)庫存/原裝 |
詢價 | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
IR |
05+ |
原廠原裝 |
7174 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
24+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
12+ |
SOT223 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 |
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