Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)

Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for

文件：144.1 Kbytes 頁數(shù)：8 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for

文件：158.96 Kbytes 頁數(shù)：8 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for

文件：164.33 Kbytes 頁數(shù)：8 Pages

IRF

絲?。?a target="_blank" title="Marking" href="/fl014n/marking.html">FL014N；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92767 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

Advanced Process Technology

文件：164.33 Kbytes 頁數(shù)：8 Pages

IRF

Advanced Process Technology

文件：164.33 Kbytes 頁數(shù)：8 Pages

IRF

55V 單個 N 通道 HEXFET Power MOSFET, 采用 SOT-223 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度;

Infineon

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