P-CHANNEL POWER MOSFETS

FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability

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SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fast switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliablility

文件：381.33 Kbytes 頁數(shù)：6 Pages

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

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HARRIS

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -15A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

文件：280.48 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電