| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.16491 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：156.72 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：2.90404 Mbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.06139 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：155.56 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：415.04 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET?Power MOSFET Description Fifth Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized design, low on-resistance and cost-effectiveness. ? Dynamic dv/dt Raging ? Repetitive Avalanche Rated ? P-Channel ? 175°C Operating Temperature ? Fas 文件：1.31095 Mbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Surface Mount DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov 文件：179.52 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Surface Mount ? Available in Tape & Reel ? Dynamic dv/dt Raging ? Repetitive Avalanche 文件：184.39 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Surface Mount ? Available in Tape & Reel ? Dynamic dv/dt Raging ? Repetitive Avalanche 文件：992.8 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
技術(shù)參數(shù)
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
40000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
100V
- Maximum Continuous Drain Current：
6A
- Material：
Si
- Configuration：
Single
- Channel Type：
P
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TO-220 |
45000 |
IR全新現(xiàn)貨IRF9520即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
IR |
17+ |
TO-220AB |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
IR |
24+/25+ |
14 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
100 |
原裝現(xiàn)貨,價格優(yōu)惠 |
詢價 | ||||
IR |
24+ |
TO-220 |
3 |
詢價 | |||
IR |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IRF |
DIP |
400 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
SAMSUNG |
05+ |
原廠原裝 |
4650 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
24+ |
原廠封裝 |
16641 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
25+ |
TO-220 |
200 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |
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