| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF840S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the 文件：1.03948 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF840S | Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirement ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet 文件：198.19 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF840S | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It 文件：172.32 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRF840S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：100.52 Kbytes 頁數(shù)：4 Pages | A-POWER 富鼎先進電子 | A-POWER | |
IRF840S | 絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；isc N-Channel Mosfet Transistor 文件：297.23 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRF840S | N-Channel MOSFET 文件：1.53193 Mbytes 頁數(shù)：5 Pages | KEXIN 科信電子 | KEXIN | |
IRF840S | Available in Tape and Reel 文件：1.55834 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | |
IRF840S | Power MOSFET 文件：145.74 Kbytes 頁數(shù)：1 Pages | TEL | TEL | |
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirement ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet 文件：198.19 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It 文件：689.31 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
詳細參數(shù)
- 型號：
IRF840S
- 功能描述：
MOSFET N-Chan 500V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
APEC |
全新原裝 |
TO-263(S) |
5000 |
全新原裝 貨期兩周 |
詢價 | ||
IR/VISHAY |
TO-220 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
IR |
最新 |
1000 |
原裝正品現(xiàn)貨 |
詢價 | |||
IR |
22+ |
D2-PAK |
9450 |
原裝正品，實單請聯(lián)系 |
詢價 | ||
IR |
17+ |
D2-PAK |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
05+ |
TO-263 |
30000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
24+ |
TO-263 |
2435 |
詢價 | |||
IR |
25+ |
TO-263 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
24+ |
原廠封裝 |
1348 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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