N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. ? Low RDs(on) ? VGS

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ? Lower RDS(on) ? Improved inductive ruggedness ? Fast switching times ? Rugged polysilicon gate cell structure ? Lower input capacitance ? Extended safe operation area ? Improved high temperature reliability

文件：273.52 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

TRANSISTORS N-CHANNEL

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET? technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling

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IRF

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-channel enhancement mode power mos transistors

文件：343.23 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel Power MOSFETs

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ARTSCHIP

isc N-Channel MOSFET Transistor

文件：45.31 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

HEXFET TRANSISTORS N-CHANNEL

Infineon

英飛凌

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8

文件：145.31 Kbytes 頁數(shù)：7 Pages

IRF

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8

文件：547.68 Kbytes 頁數(shù)：7 Pages

IRF