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          首頁 >IRFI640>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFI640

          200V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:703.84 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRFI640

          200V N-Channel MOSFET

          ONSEMI

          安森美半導(dǎo)體

          IRFI640B

          200V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:703.84 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRFI640G

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

          文件:1.80136 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFI640G

          Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A)

          DESCRIPTION Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-in

          文件:172.81 Kbytes 頁數(shù):6 Pages

          IRF

          IRFI640G

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 9.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC convert

          文件:322.94 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRFI640G

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

          文件:4.31856 Mbytes 頁數(shù):7 Pages

          KERSEMI

          IRFI640GPBF

          power mosfet

          DESCRIPTION Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-in

          文件:1.33877 Mbytes 頁數(shù):8 Pages

          IRF

          IRFI640GPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

          文件:4.31856 Mbytes 頁數(shù):7 Pages

          KERSEMI

          IRFI640GPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

          文件:1.80136 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細參數(shù)

          • 型號:

            IRFI640

          • 制造商:

            FAIRCHILD

          • 制造商全稱:

            Fairchild Semiconductor

          • 功能描述:

            200V N-Channel MOSFET

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          06+
          TO220
          4880
          自己公司全新庫存絕對有貨
          詢價
          IR
          15+
          TO-220F
          11560
          全新原裝,現(xiàn)貨庫存,長期供應(yīng)
          詢價
          IR
          24+
          TO-220
          8866
          詢價
          IR
          25+
          TO-220F
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          22+
          TO-220
          6000
          十年配單,只做原裝
          詢價
          IR
          09+
          TO-220F
          115
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          IR
          23+
          TO-220F
          8000
          只做原裝現(xiàn)貨
          詢價
          IR
          23+
          TO-220F
          7000
          詢價
          IR/VISHAY
          25+
          TO-TO-220F
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          IR
          24+
          SOT-2597&NBS
          4500
          只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
          詢價
          更多IRFI640供應(yīng)商 更新時間2026-1-21 16:07:00
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