COLOUR TELEVISION

文件：6.0518 Mbytes 頁數(shù)：70 Pages

TOSHIBA

東芝

Power MOSFET

文件：107.31 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

ST

意法半導體

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.

GESS

Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB

NJS

Power MOSFET

FEATURES ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：158.83 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement Mode Power MOSFET

Features ? VDS= 30V, ID= 25 A RDS(ON)

文件：971.39 Kbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 0.626W(TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

文件：70.07 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.626 Ω(Typ.)

文件：259.43 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：875.31 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導體