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          首頁(yè) >IRF620>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF620FI

          N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

          N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.55 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS

          文件:184.68 Kbytes 頁(yè)數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          IRF620PBF

          HEXFET Power MOSFET

          DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

          文件:884.29 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          IRF620PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

          文件:1.59241 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF620R

          isc N-Channel MOSFET Transistor

          ? DESCRITION ? Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ? FEATURES ? Low RDS(on) ? VGS Rated at ±20V ? Silicon Gate for Fast Switching Speed ? Rugged ? Low Drive Requirements

          文件:45.07 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRF620S

          Vishay Siliconix

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

          文件:141.7 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF620S

          Power MOSFET

          FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Fast switching ? Simple drive requirements ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datashee

          文件:217.5 Kbytes 頁(yè)數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF620S

          HEXFET Power MOSFET

          DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4

          文件:198.69 Kbytes 頁(yè)數(shù):6 Pages

          IRF

          IRF620S

          Power MOSFET

          Power MOSFET VDSS =200V, RDS(on) = 0.80 ohm, ID = 5.2 A

          文件:148.75 Kbytes 頁(yè)數(shù):1 Pages

          TEL

          IRF620STRLPBF

          Vishay Siliconix

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

          文件:141.7 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF6201PBF

          HEXFETPower MOSFET

          文件:252.69 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            40000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            200V

          • Maximum Continuous Drain Current:

            5A

          • Material:

            Si

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ST
          19+
          TO-220
          37500
          詢(xún)價(jià)
          IR
          24+
          TO-220
          2000
          全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
          詢(xún)價(jià)
          HAR
          23+
          TO-220
          7500
          原廠(chǎng)原裝正品
          詢(xún)價(jià)
          SEC
          2021+
          TO-220AB
          9000
          原裝現(xiàn)貨,隨時(shí)歡迎詢(xún)價(jià)
          詢(xún)價(jià)
          IR
          24+
          TO 220
          161071
          明嘉萊只做原裝正品現(xiàn)貨
          詢(xún)價(jià)
          HAR
          2450+
          TO-220
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢(xún)價(jià)
          IR
          1120G/QX
          TO-220
          5
          只做原裝,現(xiàn)貨庫(kù)存
          詢(xún)價(jià)
          STMicroelectronics
          25+
          N/A
          22412
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢(xún)價(jià)
          IR
          2015+
          SOP/DIP
          19889
          一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
          詢(xún)價(jià)
          IR
          25+
          PLCC
          18000
          原廠(chǎng)直接發(fā)貨進(jìn)口原裝
          詢(xún)價(jià)
          更多IRF620供應(yīng)商 更新時(shí)間2026-1-19 16:05:00
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