Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10μA (Max.) @ VDS= 100V Lower RDS(ON) : 0.032?(Typ.)

文件：261.72 Kbytes 頁數(shù)：7 Pages

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isc N-Channel MOSFET Transistor

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ISC

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Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175 Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.032 Ω(Typ.)

文件：267.03 Kbytes 頁數(shù)：7 Pages

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仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：274.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.032 Ω(Typ.)

文件：264.83 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體