| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF5852 | Power MOSFET(Vdss=20V) Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua 文件：239.7 Kbytes 頁數(shù)：9 Pages | IRF | IRF | |
IRF5852 | Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua 文件：130.009 Kbytes 頁數(shù)：10 Pages | IRF | IRF | |
IRF5852 | Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua 文件：132.21 Kbytes 頁數(shù)：9 Pages | IRF | IRF | |
IRF5852 | Power MOSFET(Vdss=20V) | Infineon 英飛凌 | Infineon | |
Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua 文件：206.02 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua 文件：132.21 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua 文件：130.009 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
詳細參數(shù)
- 型號：
IRF5852
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=20V)
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
TSOP-6 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR/ |
24+ |
原廠原裝 |
10015 |
ELE優(yōu)勢庫存國外貨源 |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
IRF |
25+ |
SOT-23 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
6TSOP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
23+ |
393000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
IR |
26+ |
SOP8-MSOP8 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
Infineon Technologies |
2022+ |
6-TSOP |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
23+ |
TSOP-6 |
59435 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術 |
詢價 |
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