| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF5803 | Power MOSFET(Vdss=-40V) Description These P-channel HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati 文件：109.38 Kbytes 頁數(shù)：9 Pages | IRF | IRF | |
IRF5803 | 采用 TSOP-6（Micro 6）封裝的 -40V 單 P 溝道功率 MOSFET \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? P 通道MOSFET; | Infineon 英飛凌 | Infineon | |
FETKY??MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) VDSS = -40V RDS(on) = 112m? Schottky Vf = 0.51V Description The FETKY? family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to ach 文件：127.15 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
FETKY ?MOSFET & Schottky Diode VDSS = -40V RDS(on) = 112m? Schottky Vf = 0.51V Description The FETKY? family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to ach 文件：143.4 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description These P-channel HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicatio 文件：207.68 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Ideal For Buck Regulator Applications 文件：148.89 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Co-packaged HEXFET Power 文件：159.3 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Ultra Low On-Resistance 文件：302.1 Kbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
Ultra Low On-Resistance 文件：207.68 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
P-Channel 30-V (D-S) MOSFET 文件：1.98673 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI |
技術(shù)參數(shù)
- OPN：
IRF5803TRPBF
- Qualification：
Non-Automotive
- Package name：
TSOP6L
- VDS max：
-40 V
- RDS (on) @10V max：
112 m?
- RDS (on) @4.5V max：
190 m?
- ID @25°C max：
-3.4 A
- QG typ @10V：
25 nC
- Special Features：
Small Power
- Polarity：
P
- VGS(th) min：
-1 V
- VGS(th) max：
-3 V
- VGS(th)：
-2 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TSOP-6 |
20300 |
INFINEON/英飛凌原裝特價IRF5803即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
05+ |
原廠原裝 |
7601 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
25+ |
5000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||||
IR |
23+ |
NA |
3000 |
全新原裝假一賠十 |
詢價 | ||
INFINE0N |
21+ |
TSOP-6 |
32568 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
TI/德州儀器 |
23+ |
SOP-8 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價 | ||
INFINEON |
25+ |
TSOP-6 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
Infineon Technologies |
22+ |
SOT236 Thin TSOT236 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
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