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          首頁 >IRF331>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF331

          N-Channel Power MOSFETs, 5.5A, 350 V/400V

          Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

          文件:177.13 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF331

          N-CHANNEL POWER MOSFETS

          FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low Input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

          文件:208.64 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF331

          isc N-Channel MOSFET Transistor

          DESCRIPTION ? VGS Rated at ±20V ? Silicon Gate for Fast Switching Speeds ? IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ? Rugged APPLICATIONS ? Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor cont

          文件:49.06 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF331

          N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

          Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

          文件:848.7 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF331

          Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3

          NJS

          NJS

          IRF3315

          N-Channel MOSFET Transistor

          ? DESCRITION ? Combine with the fast switching speed and ruggedized device design ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤70m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati

          文件:338.67 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF3315

          Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:124.98 Kbytes 頁數(shù):8 Pages

          IRF

          IRF3315L

          Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:197.25 Kbytes 頁數(shù):10 Pages

          IRF

          IRF3315L

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? With To-262 package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:300.35 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF3315LPBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:386.58 Kbytes 頁數(shù):10 Pages

          IRF

          技術(shù)參數(shù)

          • Package?:

            TO-220

          • VDS?max:

            150.0V

          • RDS (on)?max:

            70.0m?

          • RDS (on)(@10V)?max:

            70.0m?

          • Polarity?:

            N

          • ID (@ TC=100°C)?max:

            15.0A

          • ID ?max:

            15.0A

          • ID (@ TC=25°C)?max:

            21.0A

          • Ptot?max:

            94.0W

          • QG?:

            63.3nC?

          • Mounting?:

            THT

          • Qgd?:

            31.3nC?

          • RthJC?max:

            1.6K/W

          • VGS?max:

            20.0V

          • Tj?max:

            175.0°C

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          24+
          TO-3
          10000
          詢價
          HARRIS
          06+
          原廠原裝
          4235
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          IR
          2015+
          TO-3(鐵帽)
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          UNMARKED
          12
          全新原裝 貨期兩周
          詢價
          SILICONLM
          專業(yè)鐵帽
          TO-3
          1000
          原裝鐵帽專營,代理渠道量大可訂貨
          詢價
          IR
          專業(yè)鐵帽
          TO-3
          67500
          鐵帽原裝主營-可開原型號增稅票
          詢價
          VISHAY/威世
          23+
          SOP-8
          69820
          終端可以免費(fèi)供樣,支持BOM配單!
          詢價
          ON/安森美
          21+
          TO-3P
          30000
          百域芯優(yōu)勢 實單必成 可開13點(diǎn)增值稅發(fā)票
          詢價
          ON/安森美
          2022+
          TO-3P
          3000
          原廠代理 終端免費(fèi)提供樣品
          詢價
          M
          TO-3
          1
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          更多IRF331供應(yīng)商 更新時間2026-1-20 16:30:00
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