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    首頁 >IRF3315>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IRF3315

    Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

    Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

    文件:124.98 Kbytes 頁數(shù):8 Pages

    IRF

    IRF3315

    N-Channel MOSFET Transistor

    ? DESCRITION ? Combine with the fast switching speed and ruggedized device design ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤70m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati

    文件:338.67 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRF3315

    采用 TO-220AB 封裝的 150V 單 N 通道 HEXFET 功率 MOSFET

    \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n?;

    Infineon

    英飛凌

    IRF3315L

    Isc N-Channel MOSFET Transistor

    ? FEATURES ? With To-262 package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

    文件:300.35 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRF3315L

    Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

    Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

    文件:197.25 Kbytes 頁數(shù):10 Pages

    IRF

    IRF3315LPBF

    HEXFET Power MOSFET

    Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

    文件:386.58 Kbytes 頁數(shù):10 Pages

    IRF

    IRF3315S

    Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

    Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

    文件:197.25 Kbytes 頁數(shù):10 Pages

    IRF

    IRF3315S

    絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

    ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

    文件:189.07 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRF3315SPBF

    HEXFET Power MOSFET

    Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

    文件:386.58 Kbytes 頁數(shù):10 Pages

    IRF

    IRF3315LPBF

    ADVANCED PROCESS TECHNOLOGY

    文件:391.31 Kbytes 頁數(shù):11 Pages

    IRF

    技術(shù)參數(shù)

    • Package?:

      TO-220

    • VDS?max:

      150.0V

    • RDS (on)?max:

      70.0m?

    • RDS (on)(@10V)?max:

      70.0m?

    • Polarity?:

      N

    • ID (@ TC=100°C)?max:

      15.0A

    • ID ?max:

      15.0A

    • ID (@ TC=25°C)?max:

      21.0A

    • Ptot?max:

      94.0W

    • QG?:

      63.3nC?

    • Mounting?:

      THT

    • Qgd?:

      31.3nC?

    • RthJC?max:

      1.6K/W

    • VGS?max:

      20.0V

    • Tj?max:

      175.0°C

    供應(yīng)商型號品牌批號封裝庫存備注價格
    IR
    2024+
    N/A
    70000
    柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
    詢價
    IRF
    24+/25+
    64
    原裝正品現(xiàn)貨庫存價優(yōu)
    詢價
    IR
    06+
    TO-220AB
    1000
    自己公司全新庫存絕對有貨
    詢價
    IR
    24+
    TO-220
    50
    詢價
    IR
    2016+
    TO220
    6000
    只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
    詢價
    ir
    24+
    N/A
    6980
    原裝現(xiàn)貨,可開13%稅票
    詢價
    IR
    2015+
    TO-220AB
    12500
    全新原裝,現(xiàn)貨庫存長期供應(yīng)
    詢價
    IOR
    25+
    TO-220
    2987
    絕對全新原裝現(xiàn)貨供應(yīng)!
    詢價
    IR
    23+
    TO-220-3
    11846
    一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
    詢價
    IR
    23+
    原廠封裝
    9888
    專做原裝正品,假一罰百!
    詢價
    更多IRF3315供應(yīng)商 更新時間2026-1-22 9:00:00

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