N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. ? Low RDs(on) ? VGS

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

文件：213.53 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：67.83 Kbytes 頁數(shù)：7 Pages

INTERSIL

isc N-Channel MOSFET Transistor

文件：48.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

文件：137.47 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFETs

文件：333.66 Kbytes 頁數(shù)：6 Pages

ARTSCHIP