N-Channel Power MOSFETs, 15A, 350V/400V

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

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SAMSUNG

三星

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They

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INTERSIL

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

The HEXFET? technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

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IRF

isc N-Channel MOSFET Transistor

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ISC

無錫固電

N-CHANNEL POWER MOSFETS

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL POWER MOSFET

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SEME-LAB

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.\nThey c ? 15A, 400V\n?rDS(ON)= 0.300?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n- TB334 “Guidelines for Soldering Surface Mount\nComponents to PC Boards”;

Renesas

瑞薩

MOSFETs and JFETs

TT Electronics

場效應(yīng)管(MOSFET)

NTE