| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：370.99 Kbytes 頁數(shù)：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：370.99 Kbytes 頁數(shù)：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：303.57 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：370.99 Kbytes 頁數(shù)：13 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor 文件：338.88 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N -Channel Power MOSFET (55V/110A) 文件：543.27 Kbytes 頁數(shù)：2 Pages | FS | FS | ||
Advanced Process Technology 文件：1.17944 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology 文件：618.88 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET 文件：609.74 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology 文件：221.54 Kbytes 頁數(shù)：8 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF3205PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
55 V
- RDS (on) @10V max：
8 m?
- ID @25°C max：
110 A
- QG typ @10V：
97.3 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-220/TO-263 |
50000 |
勤思達(dá)科技主營IR系列,全新原裝正品,現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
IR |
新 |
進(jìn)口原裝 |
3000 |
庫存現(xiàn)貨 |
詢價(jià) | ||
IR |
TO-220 |
3200 |
專業(yè)分銷全系列產(chǎn)品!絕對原裝正品!量大可訂!價(jià)格優(yōu) |
詢價(jià) | |||
FSC |
19+ |
TO-220 |
53800 |
詢價(jià) | |||
25+ |
200 |
公司現(xiàn)貨庫存 |
詢價(jià) | ||||
IR/FSC |
24+ |
TO-220 |
9425 |
絕對原裝現(xiàn)貨,價(jià)格低,歡迎詢購! |
詢價(jià) | ||
IR |
23+ |
TO-220 |
2800 |
原廠原裝正品 |
詢價(jià) | ||
Infineon(英飛凌) |
24+ |
TO-220 |
8372 |
只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
英飛凌 |
24+ |
TO-220 |
5000 |
全新、原裝 |
詢價(jià) |
相關(guān)規(guī)格書
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- PI7C8150B
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