| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF3205 | 55V N-Channel Power MOSFET | MINOS 邁諾斯 | MINOS | |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? VDSS= 55V RDS(on)= 8.0m? ID= 110A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design 文件：160.74 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：176.66 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the 文件：92.66 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
N-Ch 60V Fast Switching MOSFETs Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology 文件：505.03 Kbytes 頁數(shù)：4 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? VDSS= 55V RDS(on)= 8.0m? ID= 110A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design 文件：160.74 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET VDSS= 55V RDS(on)= 8.0m? ID= 110A Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE 文件：277.34 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：939.9 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：303.57 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：303.57 Kbytes 頁數(shù)：12 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF3205PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
55 V
- RDS (on) @10V max：
8 m?
- ID @25°C max：
110 A
- QG typ @10V：
97.3 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-220/TO-263 |
50000 |
勤思達(dá)科技主營IR系列,全新原裝正品,現(xiàn)貨供應(yīng)。 |
詢價 | ||
IR |
新 |
進(jìn)口原裝 |
3000 |
庫存現(xiàn)貨 |
詢價 | ||
IR |
TO-220 |
3200 |
專業(yè)分銷全系列產(chǎn)品!絕對原裝正品!量大可訂!價格優(yōu) |
詢價 | |||
FSC |
19+ |
TO-220 |
53800 |
詢價 | |||
25+ |
200 |
公司現(xiàn)貨庫存 |
詢價 | ||||
IR/FSC |
24+ |
TO-220 |
9425 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
IR |
23+ |
TO-220 |
2800 |
原廠原裝正品 |
詢價 | ||
Infineon(英飛凌) |
24+ |
TO-220 |
8372 |
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
英飛凌 |
24+ |
TO-220 |
5000 |
全新、原裝 |
詢價 |
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