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          首頁 >IRF1010>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF1010NL

          Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:146.82 Kbytes 頁數:10 Pages

          IRF

          IRF1010NL

          Fully Avalanche Rated

          Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

          文件:1.07508 Mbytes 頁數:10 Pages

          KERSEMI

          IRF1010NLPBF

          HEXFET? Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:297.24 Kbytes 頁數:11 Pages

          IRF

          IRF1010NPBF

          Advanced Process Technology Ultra Low On-Resistance

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:3.0715 Mbytes 頁數:8 Pages

          KERSEMI

          IRF1010NPBF

          HEXFET Power MOSFET

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:182.65 Kbytes 頁數:8 Pages

          IRF

          IRF1010NS

          Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:146.82 Kbytes 頁數:10 Pages

          IRF

          IRF1010NS

          Fully Avalanche Rated

          Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

          文件:1.07508 Mbytes 頁數:10 Pages

          KERSEMI

          IRF1010NSPBF

          HEXFET? Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:297.24 Kbytes 頁數:11 Pages

          IRF

          IRF1010Z

          AUTOMOTIVE MOSFET

          AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

          文件:302.08 Kbytes 頁數:12 Pages

          IRF

          IRF1010Z

          N-Channel MOSFET Transistor

          ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤7.5m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati

          文件:338.26 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          技術參數

          • OPN:

            IRF1010EPBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            60 V

          • RDS (on) @10V max:

            12 m?

          • ID @25°C max:

            84 A

          • QG typ @10V:

            86.6 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          26+
          NA
          12328
          原裝正品價格優(yōu)惠,長期優(yōu)勢供應
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網
          詢價
          IR
          24+
          TO-220
          5000
          詢價
          IR
          15+
          TO-220
          11560
          全新原裝,現(xiàn)貨庫存,長期供應
          詢價
          IR
          24+
          TO-220
          6430
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價
          IR
          24+
          TO-220
          36500
          原裝現(xiàn)貨/放心購買
          詢價
          25+
          TO-220
          500000
          行業(yè)低價,代理渠道
          詢價
          IR
          26+
          SO-8
          86720
          全新原裝正品價格最實惠 假一賠百
          詢價
          IR
          22+
          TO-220
          6000
          現(xiàn)貨,原廠原裝假一罰十!
          詢價
          IR
          22+
          TO-220
          6000
          終端可免費供樣,支持BOM配單
          詢價
          更多IRF1010供應商 更新時間2026-1-21 15:54:00
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