| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS = 55V RDS(on) = 11m? ID = 85A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：211.92 Kbytes 頁數(shù)：8 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF1010EPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
60 V
- RDS (on) @10V max：
12 m?
- ID @25°C max：
84 A
- QG typ @10V：
86.6 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
26+ |
NA |
12328 |
原裝正品價格優(yōu)惠,長期優(yōu)勢供應(yīng) |
詢價 | |||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-220 |
5000 |
詢價 | |||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
IR |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
IR |
24+ |
TO-220 |
36500 |
原裝現(xiàn)貨/放心購買 |
詢價 | ||
25+ |
TO-220 |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
IR |
26+ |
SO-8 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
IR |
22+ |
TO-220 |
6000 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
IR |
22+ |
TO-220 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價 |
相關(guān)規(guī)格書
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- NE5532
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相關(guān)庫存
更多- NE5532
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- SI7946DP
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- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
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- TD62308
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