| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc 文件：302.08 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc 文件：302.08 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching 文件：429.6 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching 文件：429.6 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching 文件：429.6 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
N-Channel Power MOSFET 文件：632.22 Kbytes 頁數(shù)：7 Pages | NELLSEMI 尼爾半導(dǎo)體 | NELLSEMI | ||
N-Channel MOSFET Transistor 文件：338.48 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Ultra Low On-Resistance 文件：786.41 Kbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology 文件：227.87 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology Ultra Low On-Resistance 文件：3.12153 Mbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI |
技術(shù)參數(shù)
- OPN：
IRF1010EPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
60 V
- RDS (on) @10V max：
12 m?
- ID @25°C max：
84 A
- QG typ @10V：
86.6 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+/25+ |
998 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
INTERNATIONA |
05+ |
原廠原裝 |
5070 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
2012 |
TO-220 |
900000 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
IR |
24+ |
D2-Pak |
8866 |
詢價 | |||
IR |
24+ |
NA |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | ||
IOR |
25+ |
DIP |
18 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
25+ |
QFN |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
IR |
2016+ |
TO220 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
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