| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS = 55V RDS(on) = 11m? ID = 85A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：211.92 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF1010EPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
60 V
- RDS (on) @10V max：
12 m?
- ID @25°C max：
84 A
- QG typ @10V：
86.6 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+/25+ |
998 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | |||
INTERNATIONA |
05+ |
原廠原裝 |
5070 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
IR |
2012 |
TO-220 |
900000 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢(xún)價(jià) | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢(xún)價(jià) | ||
IR |
24+ |
D2-Pak |
8866 |
詢(xún)價(jià) | |||
IR |
24+ |
NA |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢(xún)價(jià) | ||
IOR |
25+ |
DIP |
18 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
IR |
25+ |
QFN |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢(xún)價(jià) | ||
IR |
2016+ |
TO220 |
3000 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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- NE5532
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- NE5532
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- NE5532A
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相關(guān)庫(kù)存
更多- NE5532
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- SI7948DP
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- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
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- TD62308
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- TL074
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