首頁 >IPB65R110CFDA>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPB65R110CFDA | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso 文件:2.33045 Mbytes 頁數(shù):16 Pages | INFINEON 英飛凌 | INFINEON | |
IPB65R110CFDA | 20V-650V汽車級MOSFET 650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ; | Infineon 英飛凌 | Infineon | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso 文件:3.85934 Mbytes 頁數(shù):20 Pages | INFINEON 英飛凌 | INFINEON | ||
isc N-Channel MOSFET Transistor ? DESCRIPTION ? Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.11? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations f 文件:315.67 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
N-Channel MOSFET Transistor ? DESCRIPTION ? Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.11? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations f 文件:338.95 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- OPN:
IPB65R110CFDAATMA1
- Qualification:
Automotive
- Package name:
PG-TO263-3
- VDS max:
650 V
- RDS (on) @10V max:
110 m?
- ID @25°C max:
31.2 A
- QG typ @10V:
118 nC
- Special Features:
automotive
- Polarity:
N
- VGS(th) min:
3.5 V
- VGS(th) max:
4.5 V
- Technology:
CoolMOS? CFDA
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
N/A |
10000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
Infineon(英飛凌) |
24+ |
標(biāo)準(zhǔn)封裝 |
8548 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
NA |
12500 |
只做全新原裝公司現(xiàn)貨特價 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
D2PAK(TO-263) |
10000 |
只做原裝歡迎含稅交易,假一賠十,放心購買 |
詢價 | ||
INFINEON |
20+ |
TO-263 |
4000 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
INFINEON |
22+ |
NA |
6520 |
原盤原標(biāo) 公司現(xiàn)貨/支持實單 |
詢價 | ||
INFINEON |
23+ |
TO-263 |
20000 |
進(jìn)口原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
24+ |
TO263 |
1125 |
只做原裝正品現(xiàn)貨,假一賠十 |
詢價 | ||
INFINEON |
2024+ |
TO-263 |
15000 |
絕對全新原裝,現(xiàn)貨熱賣 |
詢價 | ||
Infineon(英飛凌) |
24+ |
PG-TO263-3 |
6229 |
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨 |
詢價 |
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