isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC for target application ? Halogen-free according to IEC6124

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OptiMOSTM3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to AEC Q101 ? Halogen-free according to IEC61249-2-21 ? Ideal for high-frequency

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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant; Halogen free ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switch

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絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant; Halogen free ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switch

文件：438.68 Kbytes 頁數(shù)：11 Pages

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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant; Halogen free ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switch

文件：438.68 Kbytes 頁數(shù)：11 Pages

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OptiMOS? Power-Transistor

Features ? For fast switching converters and sync. rectification ? N-channel enhancement - logic level ? 175 °C operating temperature ? Avalanche rated ? Pb-free lead plating, RoHS compliant

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OptiMOS? Power-Transistor

Features ? For fast switching converters and sync. rectification ? N-channel enhancement - logic level ? 175 °C operating temperature ? Avalanche rated ? Pb-free lead plating, RoHS compliant

文件：448.32 Kbytes 頁數(shù)：10 Pages

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OptiMOS? Power-Transistor

Features ? For fast switching converters and sync. rectification ? N-channel enhancement - logic level ? 175 °C operating temperature ? Avalanche rated ? Pb-free lead plating, RoHS compliant

文件：448.32 Kbytes 頁數(shù)：10 Pages

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