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          首頁 >IPB100N10S3>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IPB100N10S3

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

          文件:400.23 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IPB100N10S3-05

          OptiMOS-T Power-Transistor

          文件:192.34 Kbytes 頁數(shù):9 Pages

          INFINEON

          英飛凌

          IPB100N10S305ATMA1

          OptiMOS-T Power-Transistor

          文件:192.34 Kbytes 頁數(shù):9 Pages

          INFINEON

          英飛凌

          IPB100N10S3-05

          100 V、N溝道、最大4.8 mΩ、汽車MOSFET、D2PAK、OptiMOS ? -T

          ? N-channel - Enhancement mode\n ? Automotive AEC Q101 qualified\n ? MSL1 up to 260°C peak reflow\n ? 175°C operating temperature\n ? Green product (RoHS compliant)\n ? 100% Avalanche tested\n\n優(yōu)勢:\n? highest current capability 180A\n ? low switching and conduction power losses for high thermal ;

          Infineon

          英飛凌

          技術(shù)參數(shù)

          • RDS (on)(@10V)?max:

            4.8m?

          • RDS (on)?max:

            4.8m?

          • QG(typical)?:

            135.0nC?

          • VDS?max:

            100.0V

          • ID ?max:

            100.0A

          • RthJC?max:

            0.5K/W

          • Ptot?max:

            300.0W

          • IDpuls?max:

            400.0A

          • VGS(th)?min?max:

            2.0V?4.0V

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
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          23+
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          更多IPB100N10S3供應(yīng)商 更新時(shí)間2026-1-17 16:01:00
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