| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>IDH；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability 文件：204.1 Kbytes 頁(yè)數(shù)：5 Pages | SUNMATE 森美特 | SUNMATE | ||
絲印：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode Features: ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / No forward recovery ? Temperature independent switching behavior ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ? 文件：846.51 Kbytes 頁(yè)數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d1665c5/marking.html">D1665C5；Package：PG-TO220-2；SiC Silicon Carbide Diode 1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa 文件：1.1745 Mbytes 頁(yè)數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印：D1665C5；Package：PG-TO220-2；5t h Generation thinQ!TM 650V SiC Schottky Diode 1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa 文件：1.1745 Mbytes 頁(yè)數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
Silicon Carbide Schottky Diode Features: ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / No forward recovery ? Temperature independent switching behavior ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ? 文件：846.51 Kbytes 頁(yè)數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
650V SiC thinQ!??Generation 5 diodes Features ■ V? at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (?175°C) ■ Improved surge capability ■ Pb-free lead plating ?10 years manufacturing of 文件：417.84 Kbytes 頁(yè)數(shù)：2 Pages | INFINEON 英飛凌 | INFINEON | ||
SiC Silicon Carbide Diode 1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa 文件：1.1745 Mbytes 頁(yè)數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
650V SiC thinQ!??Generation 5 diodes Features ■ V? at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (?175°C) ■ Improved surge capability ■ Pb-free lead plating ?10 years manufacturing of 文件：417.84 Kbytes 頁(yè)數(shù)：2 Pages | INFINEON 英飛凌 | INFINEON | ||
3rd Generation thinQ!TM SiC Schottky Diode Features ? Revolutionary semiconductor material - Silicon Carbide ? Switching behavior benchmark ? No reverse recovery / No forward recovery ? Temperature independent switching behavior ? High surge current capability ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) f 文件：242.22 Kbytes 頁(yè)數(shù)：7 Pages | INFINEON 英飛凌 | INFINEON | ||
650V SiC thinQ!??Generation 5 diodes Features ■ V? at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (?175°C) ■ Improved surge capability ■ Pb-free lead plating ?10 years manufacturing of 文件：417.84 Kbytes 頁(yè)數(shù)：2 Pages | INFINEON 英飛凌 | INFINEON |
詳細(xì)參數(shù)
- 型號(hào)：
IDH
- 功能描述：
TVS 二極管 - 瞬態(tài)電壓抑制器 TVS Diode SMC Suf MT
- RoHS：
否
- 制造商：
Vishay Semiconductors
- 極性：
Bidirectional
- 擊穿電壓：
58.9 V
- 鉗位電壓：
77.4 V
- 峰值浪涌電流：
38.8 A
- 封裝/箱體：
DO-214AB
- 最小工作溫度：
- 55 C
- 最大工作溫度：
+ 150 C
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
57000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
UN SEMICONDUCTOR |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
CCD |
09+ |
DO-214AB |
64300 |
絕對(duì)全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn) |
詢價(jià) | ||
SUNMATE(森美特) |
2019+ROHS |
SMC(DO-214AB) |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢價(jià) | ||
SMC |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
Brightking/君耀 |
19+ |
SMCDO-214AB |
200000 |
詢價(jià) | |||
LITTELFUSE/力特 |
20+ |
DO-214ABSMC |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
LITTELFUSEINC |
24+ |
NA |
3000 |
原裝現(xiàn)貨,專業(yè)配單專家 |
詢價(jià) | ||
LITELFUSE/力特 |
25+ |
SMC |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SMC |
24190 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) |
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- 5V40501DCG8
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- 5V41066PGG
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- 5V41186PGGI
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- 5V49EE903NLGI
- 5V49EE903PGGI8
- 5V49EE904NLGI
- 5V50009DCG
