絲?。?strong>IDH；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 頁數(shù)：5 Pages

SUNMATE

森美特

絲?。?a target="_blank" title="Marking" href="/d0212c5/marking.html">D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features: ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / No forward recovery ? Temperature independent switching behavior ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ?

文件：846.51 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/d1665c5/marking.html">D1665C5；Package：PG-TO220-2；SiC Silicon Carbide Diode

1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/d1665c5/marking.html">D1665C5；Package：PG-TO220-2；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

Silicon Carbide Schottky Diode

Features: ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / No forward recovery ? Temperature independent switching behavior ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ?

文件：846.51 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

650V SiC thinQ!??Generation 5 diodes

Features ■ V? at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (?175°C) ■ Improved surge capability ■ Pb-free lead plating ?10 years manufacturing of

文件：417.84 Kbytes 頁數(shù)：2 Pages

INFINEON

英飛凌

SiC Silicon Carbide Diode

1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

650V SiC thinQ!??Generation 5 diodes

Features ■ V? at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (?175°C) ■ Improved surge capability ■ Pb-free lead plating ?10 years manufacturing of

文件：417.84 Kbytes 頁數(shù)：2 Pages

INFINEON

英飛凌

3rd Generation thinQ!TM SiC Schottky Diode

Features ? Revolutionary semiconductor material - Silicon Carbide ? Switching behavior benchmark ? No reverse recovery / No forward recovery ? Temperature independent switching behavior ? High surge current capability ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) f

文件：242.22 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

650V SiC thinQ!??Generation 5 diodes

Features ■ V? at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (?175°C) ■ Improved surge capability ■ Pb-free lead plating ?10 years manufacturing of

文件：417.84 Kbytes 頁數(shù)：2 Pages

INFINEON

英飛凌