| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>IDK；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta 文件：668.54 Kbytes 頁數(shù)：5 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲?。?strong>IDK；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability 文件：204.1 Kbytes 頁數(shù)：5 Pages | SUNMATE 森美特 | SUNMATE | ||
絲印：IDK；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge 文件：182.78 Kbytes 頁數(shù)：6 Pages | BOURNS 伯恩斯 | BOURNS | ||
絲印：IDK；Package：SMCJ；3000W Transient Voltage Suppression Diodes 文件：1.28142 Mbytes 頁數(shù)：12 Pages | FUTUREWAFER | FUTUREWAFER | ||
絲?。?strong>IDK；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors 文件：609.41 Kbytes 頁數(shù)：4 Pages | BYTESONIC 松浩電子 | BYTESONIC | ||
絲?。?a target="_blank" title="Marking" href="/d0212c5/marking.html">D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Features ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / no forward recovery ? Temperature independent switching behaviour ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ? 文件：1.06272 Mbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d0512c5/marking.html">D0512C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode Features ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / no forward recovery ? Temperature independent switching behaviour ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ? 文件：998.64 Kbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d8512c5/marking.html">D8512C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode Features ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / no forward recovery ? Temperature independent switching behaviour ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ? 文件：1.03839 Mbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d1012c5/marking.html">D1012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode Features ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / no forward recovery ? Temperature independent switching behaviour ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ? 文件：1.0387 Mbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d1612c5/marking.html">D1612C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode Features ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / no forward recovery ? Temperature independent switching behaviour ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ? 文件：1.07298 Mbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON |
詳細參數(shù)
- 型號：
IDK
- 功能描述：
TVS 二極管 - 瞬態(tài)電壓抑制器 6.5volts 500uA 267.9 Amps Bi-Dir
- RoHS：
否
- 制造商：
Vishay Semiconductors
- 極性：
Bidirectional
- 擊穿電壓：
58.9 V
- 鉗位電壓：
77.4 V
- 峰值浪涌電流：
38.8 A
- 封裝/箱體：
DO-214AB
- 最小工作溫度：
- 55 C
- 最大工作溫度：
+ 150 C
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
08+ |
DO-214AB |
64300 |
絕對全新原裝強調(diào)只做全新原裝現(xiàn) |
詢價 | ||
MCC |
20+ |
SMC |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
BOURNS |
25+ |
DO-214 |
6985 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Bourns |
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
BOURNS |
25+ |
N/A |
11528 |
樣件支持,可原廠排單訂貨! |
詢價 | ||
Micro |
1942+ |
N/A |
1764 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
Microsemi |
DO-214AB |
88000 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
MCC/美微科 |
23+ |
SMC |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
MCC |
19+ |
SMC |
200000 |
詢價 | |||
MCC |
24+ |
SMC |
89000 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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