絲?。?strong>I730；Package：TO-262；6A 400V N-channel Enhancement Mode Power MOSFET

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WXDH

東海半導(dǎo)體

Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dv/dt Rating ? Repetitive Avalanche Rated ? Current Sense ? Fast Switching ? Ease

文件：223.63 Kbytes 頁數(shù)：8 Pages

IRF

N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

Description The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features

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STMICROELECTRONICS

意法半導(dǎo)體

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in

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PHI

PHI